Modernization of multi-kilowatt RF communication and data transmission systems is pushing the requirements of what traditional vacuum electron devices and solid state semiconductor technology can deliver. Thanks to the pioneering work of our team at Integra, we have achieved a breakthrough raising the bar for GaN-on-SiC technology, by propelling the operating voltage for this class of device to a new high of 100V. The ground-breaking progress that we have made enables 100V GaN/SiC-based HEMTs to offer a superior solution for avionics, radar systems, high-energy particle accelerators, and other applications requiring high output power, wide operating bandwidth and high efficiency.
Review
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